annealing room
英 [əˈniːlɪŋ ruːm]
美 [əˈniːlɪŋ ruːm]
退火车间，退火工段
双语例句
- The effects of hydrogen annealing on silicon carbide films grown on Si ( 111) substrates by radio frequency magnetron sputtering at room temperature are investigated.
用射频磁控溅射法在常温硅衬底上制备了碳化硅薄膜并研究了氢退火对薄膜的影响。 - The polycrystalline ITO film with low resistance and low pressure stress can be fabricated by vacuum annealing amorphous ITO film deposited at room temperature.
结果表明，采用室温沉积非晶态ITO膜，在真空退火下可获得低电阻、低压应力的多晶相ITO膜。 - With increasing the annealing temperature, this peak weakens and the Young's modulus at room temperature changes slightly.
随着退火温度的升高，该内耗峰逐渐减弱，而Young's模量变化不大。 - The results show that the higher pressure stress of ITO layer is the main factors causing the warp of ITO conductive coating thin glass, and the polycrystalline ITO film with low pressure stress can be fabricated by higher temperature annealing amorphous ITO film deposited at room temperature.
实验发现，ITO膜层的很高的压应力是导致导电膜玻璃翘曲的直接原因；采用室温沉积非晶ITO膜，然后经高温热退火可获得低膜压应力多晶相ITO膜。 - Isochronal thermal annealing behavior of NTD floating zone silicon grown in the hydrogen ambient ( called NTD FZ ( H) Si) is reported. The dependencies of resistivity and carrier mobility on the annealing temperature are determined by room temperature Hall electrical measurements.
对NTD氢区熔单晶硅进行了不同温度下等时退火，采用Hall电学方法测量了电阻率、迁移率随退火温度的变化规律。 - SAMs with different chain lengths have different annealing properties, because of different initial states at room temperature, such as gauche concentrations and degrees of order.
不同碳链长度的自组装单分子膜的温度特性不同，其主要原因是这些自组装单分子膜在室温时对应的初始状态不同，如有序度、膜内缺陷含量等不同。 - When irradiation response and dose are linear, total dose radiation and post-irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory.
研究结果表明，辐射响应与吸收剂量成线性关系时，在实验室选用任一特定剂量率进行总剂量辐射和辐照后室温退火，可以通过线性响应理论模拟其它剂量率辐射下的总剂量效应。 - The results show that annealing will make most of the amorphous P, which are deposited on GaAs ( lOO) surface at room temperature, desorb with some randomly distributed P-clusters left on the surface.
结果表明，经退火后，室温下淀积于GaAs表面的非晶P大部分脱附，仅剩下少量无规分布于表面的P集团。 - Therefore, annealing temperature of400 ℃ is of the best annealing temperature as Mo Back electrode. ( 3) The Mo thin film prepared at different substrate temperatures from room temperatures to300 ℃, the crystallization, resistivity changed rarely.
因此Mo背电极薄膜的最佳退火温度为400℃。（3）在不同的衬底温度下制备的Mo薄膜，由RT升高到300℃，薄膜结晶质量、电阻率变化不大。 - The on-line current and the annealing effect in room temperature were monitored to analyze the damage mechanism.
测试了辐照生电流和室温下的退火效应以分析器件的退化机理。 - Generally, the elastic resilience became better with the annealing temperature rising except an abnormity at 3 at% Zr. It was related to the Ms temperature of alloys which was slightly lower than the room temperature.
一般情况下，随着退火温度的升高，该系列合金的弹性回复能力越好。但Zr元素含量为3at%时出现异常，与此成分合金的Ms点略低于室温有关。